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MITSUBISHI RF POWER MODULE
M68731H
SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
OUTLINE DRAWING
300.2 26.60.2 21.20.2
Dimensions in mm
BLOCK DIAGRAM
2
3
2-R1.50.1
1 5 1 2 3 4
4 5
0.45 61 13.71 18.81 23.91 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN
ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted)
Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Strage temperature Conditions VGG3.5V, ZG=ZL=50 f=150-175MHz, ZG=ZL=50 f=150-175MHz, ZG=ZL=50 f=150-175MHz, ZG=ZL=50 Ratings 9.2 4 70 10 -30 to +100 -40 to +110 Unit V V mW W C C
Note. Above parameters are guarateed independently.
ELECTRICAL CHARACTERISTICS (Tc=25C,ZG=ZL=50 unless otherwise noted)
Symbol f PO T 2fO in Frequency range Output power Total efficiency 2nd. harmonic Input VSWR Stability Load VSWR tolerance Parameter Test conditions Limits Min 150 7 50 Max 175 Unit MHz W % dBc -
VDD=7.2V, VGG=3.5V, Pin=50W ZG=50, VDD=4-9.2V, Load VSWR<4:1 VDD=9.2V, Pin=50mW, PO=7W (VGG adjust), ZL=20:1
-20 4 No parasitic oscillation No degradation or destroy
Note. Above parameters, ratings, limits and test conditions are subject to change. Nov. 97
MITSUBISHI RF POWER MODULE
M68731H
SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 14 13 @VDD=7.2V 12 VGG=3.5V Pin=50mW 11 PO 10 9 8 7 T 6 5 4 3 in 2 1 0 130 140 150 160 FREQUENCY f (MHz) 90 80 70 60 50 40 30 20 180 0.1 0.01 1 100 1 10 OUTPUT POWER, TOTAL EFFICENCY VS. INPUT POWER 100 @VDD=7.2V VGG=3.5V f=150MHz 10 PO T 100
170
0.1
1
10
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICENCY VS. INPUT POWER 100 @VDD=7.2V VGG=3.5V f=175MHz 10 PO T 1 10 100
OUTPUT POWER, TOTAL EFFICIENCY VS. SUPPLY VOLTAGE 16 14 12 10 8 6 4 2 T PO @f=150MHz VGG=3.5V Pin=50mW 100 90 80 70 60 50 40 30 3 4 5 6 7 8 20 9
0.1 0.01
0.1
1
10
1 100
0 SUPPLY VOLTAGE VDD (V)
INPUT POWER Pin (mW)
OUTPUT POWER, TOTAL EFFICIENCY VS. SUPPLY VOLTAGE 16 14 12 10 8 6 4 2 0 3 4 5 6 7 8 SUPPLY VOLTAGE VDD (V) T PO @f=175MHz VGG=3.5V Pin=50mW 100 90 80 70 60 50 40 30 20 9 1 10 100
OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE @VDD=7.2V Pin=50mW f=150MHz PO T 10 100
0.1 0.5
1
1.5
2
2.5
3
1 3.5
GATE VOLTAGE VGG (V)
Nov. 97
MITSUBISHI RF POWER MODULE
M68731H
SILICON MOS FET POWER AMPLIFIER, 150-175MHz, 7W, FM PORTABLE RADIO
OUTPUT POWER, TOTAL EFFICIENCY VS. GATE VOLTAGE 100 @VDD=7.2V Pin=50mW f=175MHz 10 PO T 1 10 100
0.1 0.5
1
1.5
2
2.5
3
1 3.5
GATE VOLTAGE VGG (V)
Nov. 97

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